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RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49070. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <90ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRU100120 PACKAGE TO-218 BRAND RHR100120 Packaging JEDEC STYLE TO-218 NOTE: When ordering, use the entire part number. ANODE Symbol CATHODE (FLANGE) K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRU100120 UNITS V V V A 1200 1200 1200 100 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 62.5oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 200 A 1000 A 300 50 -65 to 175 W mJ oC 3-1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RHRU100120 Electrical Specifications SYMBOL VF TC = 25oC, Unless Otherwise Specified MIN TYP 60 25 MAX 3.2 2.6 250 2 90 100 0.5 UNITS V V A mA ns ns ns ns oC/W TEST CONDITION IF = 100A IF = 100A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s ta tb RJC DEFINITIONS IF = 100A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 500 IR , REVERSE CURRENT (A) 1000 175oC IF, FORWARD CURRENT (A) 100 100oC 10 100 175oC 100oC 10 25oC 1 0.1 25oC 1 0 0.5 1 1.5 2 2.5 3 3.5 0.01 4 4.5 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 3-2 RHRU100120 Typical Performance Curves 150 125 t, RECOVERY TIMES (ns) 100 (Continued) 100 TC = 25oC, dIF/dt = 100A/s IF(AV) , AVERAGE FORWARD CURRENT (A) 80 DC 60 SQ. WAVE trr ta 75 50 40 tb 25 0 1 10 IF, FORWARD CURRENT (A) 100 20 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT IMAX = 1.6A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3-3 |
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